SIMBAD is set of programs for the simulation of growth and analysis of thin films. It's primary focus has been on simulation of the sputtering of thin films for VLSI metallization and a large number of papers based on SIMBAD have been published. Currently SIMBAD has been used to simulate the sputter deposition of refractory metals, high temperature deposition of Al, CVD of refractory metal, sputter etching and bias sputtering of refractory metals and also the growth of hail stones.

Although the SIMBAD code is being expanded a refined a version of the program is available from Reaction Design.

The SIMBAD research project is joint effort undertaken by Tom Smy at Carleton University and Steve Dew and M. J Brett at the University of Alberta, Anybody who is interested in the project should contact us.