An A.G. Associates Heatpulse 210 incoherent lamp annealer with thermocouple temperature control is available for general use for annealing in Ar, N2 or O2 ambients. This system is intensively used for implant activation and rapid thermal silicidation. Wafer diameters up to 100 mm can be accomodated.
An AET Thermal RX-UHV4 rapid thermal CVD system equipped with a load lock and microcomputer control of temperature and gas flow is also available. This system has a CTI-8 cryopump for the load lock chamber and an Osaka TF 160 turbopump for the process chamber. Temperature control during processing is accomplished by pyrometry, although a thermocouple can be temporarily inserted into the chamber for pyrometer calibration. This system is presently equipped with SiH4, GeH4, PH3, B2H6 and H2 sources for SiGe epitaxy for HBT structures.